Characterization of Single Mask MIM capacitor with Copper Damascene Metallization

This paper presents a cost-effective and manufacturable metal-insulator-metal (MIM) capacitor structure with Copper (Cu) and Titanium Nitride (TiN) electrodes, designed for 130nm 5-level Cu-metallization technology. Several process parameters were optimized to enhance reliability in Cu BEOL processes, including SiN deposition precursor gas flow, soaking conditions, Cu seed process temperature, Cu annealing, and top plate metal profile. These optimizations resulted in low leakage, high breakdown voltage, with improved MIM TDDB reliability. Our findings demonstrate a promising approach to achieving high-performance MIM capacitors for advanced semiconductor applications.