Designing high dielectric breakdown strategy for high-temperature capacitive energy storage and filtering performance via carrier trap mechanism

Antiferroelectric (AFE) ceramic materials with excellent temperature stability are critical to meet ever-increasing demands for practical energy storage application. However, how to remain high dielectric breakdown strategy at high temperature, at the same time to keep energy storage density (<em>W</em>_rec) with high energy storage efficiency (<em>η</em>) is still a big challenge. In this work, polyurethane-Cu (PU-Cu) is introduced into (Pb_0.64Tm_0.04La_0.2)(Zr_0.55Sn_0.44Ti_0.01) (PTL2ZST) AFE thick film to enhance energy storage performance at high temperature. PTL2ZST dispersed filling in PU-Cu, because PU-Cu functions introducing carrier traps, reducing conduction and leakage current at high temperature. As a result, at working temperature of 140&nbsp;°C, its <em>W_rec </em>and <em>η</em> keep within the range of ± 5% compared to pure PTL2ZST (<em>W</em>_rec gets lost 21.7%, <em>η </em>gets up 9.4 % at 100 °C). Furthermore, an ultrahigh<em> W</em>_rec of 17.01 J/cm³with<em> η</em> of 80.31% in PTL2ZST-90%PU-Cu thick films at 2500 kV/cm under room temperature (RT) is obtained. Meanwhile, this study has outstanding filtering performance due to high insulation that carrier traps weaken the charge carrier transport. In rectifier circuit, PTL2ZST-90% PU-Cu films can filter off 90% clutter. This study provides a feasible method to produce high performance dielectric due to its high energy storage performance and heat resistance, also broaden the field of filter application.