Analysis of the SEU Tolerance of an FPGA-Based Time-to-Digital Converter Using Emulation-Based Fault Injection

In application domains where severe environmental conditions are unavoidable, including high-energy physics and nuclear power plants, accurate and dependable time-to-digital converters (TDCs) are essential components. Single-event upsets (SEUs) associated with the configuration memory of field-programmable gate array (FPGA)-based implementations are becoming common sources of performance degradation even in terrestrial areas. Hence, the need to test and mitigate the effects of SEUs on FPGA-based TDCs is crucial to ensure that the design achieves reliable performance under critical conditions. The TMR SEM IP provides real-time fault injection, and dynamic SEU monitoring and correction in safety critical conditions without intervening with the functionality of the system, unlike traditional fault injection methods. This paper presents a scalable and fast fault emulation framework that tests the effects of SEUs on the configuration memory of a 5.7 ps-resolution TDC implemented on ZedBoard. The experimental results demonstrate that the standard deviation in mean bin width is 2.4964 ps for the golden TDC, but a 0.8% degradation in the deviation is observed when 3 million SEUs are injected, which corresponds to a 0.02 ps increment. Moreover, as the number of SEUs increases, the degradation in the RMS integral non-linearity (INL) of the TDC also increases, which shows 0.04 LSB (6.8%) and 0.05 LSB (8.8%) increments for 1 million and 3 million SEUs injected, respectively. The RMS differential non-linearity (DNL) of the faulty TDC with 3 million SEUs injected shows a 0.035 LSB (0.8%) increase compared to the golden TDC.

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Publication Details

Journal
Electronics
Published
2025-05-27
DOI
https://doi.org/10.3390/electronics14112176
Citations
2
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
1.46

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article

Analysis of the SEU Tolerance of an FPGA-Based Time-to-Digital Converter Using Emulation-Based Fault Injection

Roza Teklehaimanot Siecha, Jeffrey Prinzie, Paul Leroux, Getachew Alemu
2 citations
Electronics
Radiation Effects in Electronics
1.46
article

Analysis of the SEU Tolerance of an FPGA-Based Time-to-Digital Converter Using Emulation-Based Fault Injection

Roza Teklehaimanot Siecha, Jeffrey Prinzie, Paul Leroux, Getachew Alemu
article en
2 citations

Abstract

In application domains where severe environmental conditions are unavoidable, including high-energy physics and nuclear power plants, accurate and dependable time-to-digital converters (TDCs) are essential components. Single-event upsets (SEUs) associated with the configuration memory of field-programmable gate array (FPGA)-based implementations are becoming common sources of performance degradation even in terrestrial areas. Hence, the need to test and mitigate the effects of SEUs on FPGA-based TDCs is crucial to ensure that the design achieves reliable performance under critical conditions. The TMR SEM IP provides real-time fault injection, and dynamic SEU monitoring and correction in safety critical conditions without intervening with the functionality of the system, unlike traditional fault injection methods. This paper presents a scalable and fast fault emulation framework that tests the effects of SEUs on the configuration memory of a 5.7 ps-resolution TDC implemented on ZedBoard. The experimental results demonstrate that the standard deviation in mean bin width is 2.4964 ps for the golden TDC, but a 0.8% degradation in the deviation is observed when 3 million SEUs are injected, which corresponds to a 0.02 ps increment. Moreover, as the number of SEUs increases, the degradation in the RMS integral non-linearity (INL) of the TDC also increases, which shows 0.04 LSB (6.8%) and 0.05 LSB (8.8%) increments for 1 million and 3 million SEUs injected, respectively. The RMS differential non-linearity (DNL) of the faulty TDC with 3 million SEUs injected shows a 0.035 LSB (0.8%) increase compared to the golden TDC.

ElectronicsVol. 14(11)
Addis Ababa Science and Technology University (ET), Addis Ababa University (ET), KU Leuven (BE)
Ministry of Education, Ethiopia
Openalex Percentile: Top 17%
Radiation Effects in Electronics
1.46
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