Transmission through multiple Mott insulator–semiconductor wells
Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasiparticle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well-known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.
Authors
- Jan Verlage (ORCID: https://orcid.org/0009-0002-1853-7394)
- Peter Kratzer (ORCID: https://orcid.org/0000-0001-5947-1366)
Institutions
- University of Duisburg-Essen (DE)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-05-27
- DOI
- https://doi.org/10.1103/physrevb.111.195158
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Deutsche Forschungsgemeinschaft