Transmission through multiple Mott insulator–semiconductor wells

Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasiparticle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well-known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-05-27
DOI
https://doi.org/10.1103/physrevb.111.195158
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.00

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article

Transmission through multiple Mott insulator–semiconductor wells

Jan Verlage, Peter Kratzer
Physical review. B./Physical review. B
Electronic and Structural Properties of Oxides
article

Transmission through multiple Mott insulator–semiconductor wells

Jan Verlage, Peter Kratzer
article en

Abstract

Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasiparticle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well-known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.

Physical review. B./Physical review. BVol. 111(19)
University of Duisburg-Essen (DE)
Deutsche Forschungsgemeinschaft
Openalex Percentile: Top 92%
Electronic and Structural Properties of Oxides
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Transmission through multiple Mott insulator–semiconductor wells — Jan Verlage, Peter Kratzer · Physical review. B./Physical review. B (2025) | TGRS Research Map | TGRS