Rapid Probe Microscope (RPM) Technology Advances High-Speed AFM Systems for Next-Generation Semiconductor Metrology

High-speed AFM systems for in-line semiconductor process control have recently been commercialised, and this emerging technology is now being integrated into advanced device manufacturing. This paper explores the applications and opportunities of these systems in supporting next-generation metrology and process control, focusing on measurement, data analysis, and achievable throughput under production conditions. Performance data from the Metron3D system is provided, highlighting its use in next-generation lithography and advanced packaging case studies.With the advent of High Numerical Aperture Extreme Ultraviolet (HNA-EUV) lithography, the reduction in lithographic depth of focus necessitates near-perfect planarization across varying lateral scales. For lithographic process optimisation, accumulating evidence demonstrates that 3D Atomic Force Microscopy (AFM) metrology provides critical data for the fine-tuning of these processes, offering localised 3D insights that are unattainable with current electron beam (e-beam) and optical metrology methods. The Rapid Probe Microscope (RPM), an advanced hybrid optical AFM incorporated into the Metron3D system is evaluated. The RPM’s sensitivity to lithographic process parameters is demonstrated through 3D characterisation of contact hole geometries at feature sizes smaller than current technology nodes, achieving critical dimensions (CD) down to 12 nm, aligning with the stringent requirements of HNA-EUV lithography.The advancing demands of next-generation packaging technologies impose equally rigorous performance standards on Chemical Mechanical Planarisation (CMP) processes. For advanced packaging, particularly in hybrid bonding processes, A robust methodology for measuring copper pad heights on semiconductor wafers is presented, at a scanning speed of 7.1 mm/s, with exceptional repeatability of 20 pm, whilst achieving throughput rates exceeding 60 wafers per hour (WPH) under standard sampling conditions for in – line use.Significant progress has also been made in advanced image processing algorithms and integrated data analysis, enabling capabilities such as image segmentation, pattern recognition, dimensional analysis, and detection of nuanced metrology signals, further enhancing the precision and utility of RPM in semiconductor manufacturing.

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Publication Details

Published
2025-05-05
DOI
https://doi.org/10.1109/asmc64512.2025.11010280
Citations
1
Primary Topic
Force Microscopy Techniques and Applications
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article
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1.25
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Rapid Probe Microscope (RPM) Technology Advances High-Speed AFM Systems for Next-Generation Semiconductor Metrology

Lei Feng, Richard Thorogate, Vishal Panchal, Robinson James et al.
1 citations
Force Microscopy Techniques and Applications
1.25
article

Rapid Probe Microscope (RPM) Technology Advances High-Speed AFM Systems for Next-Generation Semiconductor Metrology

Lei Feng, Richard Thorogate, Vishal Panchal, Robinson James, Andrew D. L. Humphris
article en
1 citations

Abstract

High-speed AFM systems for in-line semiconductor process control have recently been commercialised, and this emerging technology is now being integrated into advanced device manufacturing. This paper explores the applications and opportunities of these systems in supporting next-generation metrology and process control, focusing on measurement, data analysis, and achievable throughput under production conditions. Performance data from the Metron3D system is provided, highlighting its use in next-generation lithography and advanced packaging case studies.With the advent of High Numerical Aperture Extreme Ultraviolet (HNA-EUV) lithography, the reduction in lithographic depth of focus necessitates near-perfect planarization across varying lateral scales. For lithographic process optimisation, accumulating evidence demonstrates that 3D Atomic Force Microscopy (AFM) metrology provides critical data for the fine-tuning of these processes, offering localised 3D insights that are unattainable with current electron beam (e-beam) and optical metrology methods. The Rapid Probe Microscope (RPM), an advanced hybrid optical AFM incorporated into the Metron3D system is evaluated. The RPM’s sensitivity to lithographic process parameters is demonstrated through 3D characterisation of contact hole geometries at feature sizes smaller than current technology nodes, achieving critical dimensions (CD) down to 12 nm, aligning with the stringent requirements of HNA-EUV lithography.The advancing demands of next-generation packaging technologies impose equally rigorous performance standards on Chemical Mechanical Planarisation (CMP) processes. For advanced packaging, particularly in hybrid bonding processes, A robust methodology for measuring copper pad heights on semiconductor wafers is presented, at a scanning speed of 7.1 mm/s, with exceptional repeatability of 20 pm, whilst achieving throughput rates exceeding 60 wafers per hour (WPH) under standard sampling conditions for in – line use.Significant progress has also been made in advanced image processing algorithms and integrated data analysis, enabling capabilities such as image segmentation, pattern recognition, dimensional analysis, and detection of nuanced metrology signals, further enhancing the precision and utility of RPM in semiconductor manufacturing.

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