Understanding the Mechanism of Metal Oxide Defect Formation at the Via Bottom
The semiconductor manufacturing process is a complex and intricate system that is susceptible to even the slightest deviations. Yield issues can significantly affect production efficiency and product reliability. Therefore, a comprehensive understanding of the intertwined technical and systemic factors involved is essential for maintaining high yield rates in semiconductor manufacturing. This paper presents an in-depth analysis of a recurring yield issue, illustrating how various factors can converge to compromise yield for the borderless or zero enclosure Via* design. The proposed yield loss mechanism, a key contribution of this analysis, was validated, paving the way for its practical application in selecting wet cleaning chemicals for the post Via* etch residual removal for tight Via* overlay designs.
Authors
- Leonardo Sutanto
- C.S. Lee
- Timothy Wong (ORCID: https://orcid.org/0000-0002-5003-1206)
- K. S. Nivedhitha (ORCID: https://orcid.org/0000-0002-6251-0829)
Institutions
- GlobalFoundries (Germany) (DE)
Publication Details
- Published
- 2025-05-05
- DOI
- https://doi.org/10.1109/asmc64512.2025.11010432
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00