Understanding the Mechanism of Metal Oxide Defect Formation at the Via Bottom

The semiconductor manufacturing process is a complex and intricate system that is susceptible to even the slightest deviations. Yield issues can significantly affect production efficiency and product reliability. Therefore, a comprehensive understanding of the intertwined technical and systemic factors involved is essential for maintaining high yield rates in semiconductor manufacturing. This paper presents an in-depth analysis of a recurring yield issue, illustrating how various factors can converge to compromise yield for the borderless or zero enclosure Via* design. The proposed yield loss mechanism, a key contribution of this analysis, was validated, paving the way for its practical application in selecting wet cleaning chemicals for the post Via* etch residual removal for tight Via* overlay designs.

Authors

Institutions

Publication Details

Published
2025-05-05
DOI
https://doi.org/10.1109/asmc64512.2025.11010432
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Understanding the Mechanism of Metal Oxide Defect Formation at the Via Bottom

Leonardo Sutanto, C.S. Lee, Timothy Wong, K. S. Nivedhitha
Semiconductor materials and devices
article

Understanding the Mechanism of Metal Oxide Defect Formation at the Via Bottom

Leonardo Sutanto, C.S. Lee, Timothy Wong, K. S. Nivedhitha
article en

Abstract

The semiconductor manufacturing process is a complex and intricate system that is susceptible to even the slightest deviations. Yield issues can significantly affect production efficiency and product reliability. Therefore, a comprehensive understanding of the intertwined technical and systemic factors involved is essential for maintaining high yield rates in semiconductor manufacturing. This paper presents an in-depth analysis of a recurring yield issue, illustrating how various factors can converge to compromise yield for the borderless or zero enclosure Via* design. The proposed yield loss mechanism, a key contribution of this analysis, was validated, paving the way for its practical application in selecting wet cleaning chemicals for the post Via* etch residual removal for tight Via* overlay designs.

GlobalFoundries (Germany) (DE)
Openalex Percentile: Top 90%
Semiconductor materials and devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Understanding the Mechanism of Metal Oxide Defect Formation at the Via Bottom — Leonardo Sutanto, C.S. Lee, et al. · (2025) | TGRS Research Map | TGRS