A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics
To investigate the performance degradation of a vertical-cavity surface-emitting laser (VCSEL) caused by self-heating effects, a 940 nm VCSEL with a buried tunnel junction (BTJ) and an aperture size of 10 μm was designed. The BTJ-type VCSEL achieves a 39.38% higher peak power (19.96 mW), a 3.26% higher peak power conversion efficiency (46.41%), and a 24.97% lower differential resistance (37.32 Ω), and the thermal rollover current is delayed to 6.07 mA than conventional design. When the injection current is 20 mA, the BTJ-type VCSEL exhibits a low temperature and Auger recombination rate, while the stimulated recombination rate is high. In addition, the BTJ-type VCSEL shows a small far-field divergence angle and good beam quality. Therefore, the designed BTJ-type VCSEL offers valuable guidance for the preparation of high-reliability and long-lifetime VCSEL.
Authors
- Wei Jia (ORCID: https://orcid.org/0000-0003-1678-5845)
- Hailiang Dong (ORCID: https://orcid.org/0000-0001-5027-7858)
- Zhigang Jia (ORCID: https://orcid.org/0000-0003-4723-9601)
- Shufang Ma (ORCID: https://orcid.org/0000-0002-6689-6300)
- Lin Shang
- Linjin Song (ORCID: https://orcid.org/0009-0005-0140-3885)
Institutions
- Interface (United States) (US)
- Shaanxi University of Science and Technology (CN)
- Taiyuan University of Technology (CN)
Publication Details
- Journal
- AIP Advances
- Published
- 2025-05-01
- DOI
- https://doi.org/10.1063/5.0267467
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Basic Research Program of Shaanxi Province