Measuring Key Parameters (Depth and Bottom CD) in Deep Trench Isolation Applications (>50 μm) with the New SpectraShape™

Measuring non-destructive deep trenches, through silicon vias (TSV), and structures having high aspect ratio and large pitch applications is becoming important in today’s semiconductor industry (e.g., hybrid bonding, power technologies, etc.). [1], [2] Effective monitoring of critical parameters inline is crucial to establish and maintain stable device performance and guaranteeing high yield. In this paper, we will show the possibility to measure deep trenches using the new designed SpectraShape™ dimensional metrology system.