AI-Powered Etching Architecture Refinement from Small Data in 3D NAND Development
This study demonstrates a promising approach for optimizing as-etched structures using an artificial intelligence (AI) model built on a small dataset collected from specific plasma etching conditions. Through advanced optimization with AI-assisted tuning, the resulting vertical channel (VC) structure of 3D NAND effectively minimizes shape deformation and contributes to enhanced reliability performance in 3D NAND device operation.
Authors
- Hong-Ji Lee
- Cheng‐En Tsai (ORCID: https://orcid.org/0000-0002-1366-2148)
- Tahone Yang
- Ming-Tsung Wu
- Min-Hsuan Huang
- Nan-Tzu Lian
- Kuang-Chao Chen
- Kening Lu (ORCID: https://orcid.org/0000-0002-8459-5480)
- Chih-Yuan Lu
- Zusing Yang
Institutions
- Macronix International (Taiwan) (TW)
Publication Details
- Published
- 2025-05-05
- DOI
- https://doi.org/10.1109/asmc64512.2025.11010718
- Primary Topic
- Advanced Data Storage Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00