Contribution of Raman Spectroscopy to Strain Metrology in Trench Array Structures : AM: Advanced Metrology
Raman spectroscopy is proposed for the high-resolution measurement of strain in microelectronic devices. This structural property, which operates at different scales, can be measured by different techniques, each with specific sensitivities and probe sizes. The interest of Raman spectroscopy lies in its ability to analyze ultra-thin or 3D structures down to less than 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-4</sup> in terms of strain with a submicron lateral resolution. In this work, micron scale pillar arrays are investigated. The combination of μ-Raman with profilometric and morphological measurements illustrates its potential as a new in-line technique for the strain metrology.
Authors
- Emmanuel Nolot
- Michel Mermoux (ORCID: https://orcid.org/0000-0002-0108-2197)
- Romain Duru (ORCID: https://orcid.org/0000-0002-1941-2772)
- Delphine Le Cunff (ORCID: https://orcid.org/0000-0001-7489-1553)
- V. Brouzet (ORCID: https://orcid.org/0000-0003-1325-6729)
- Viet Ha Le (ORCID: https://orcid.org/0000-0001-6599-1018)
- Nicolas Kubler
- C. Sart
- D. Monteil
Institutions
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- STMicroelectronics (France) (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Laboratoire d’Electrochimie et de Physico-chimie des Matériaux et des Interfaces (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2025-05-05
- DOI
- https://doi.org/10.1109/asmc64512.2025.11010517
- Primary Topic
- Industrial Vision Systems and Defect Detection
- Type
- article
- Field-Weighted Citation Impact
- 0.00