A New Continuous Plasma Process For Defect Reduction

In a DRAM polysilicon etch back process, blocked etch defects existed in the high-volume manufacturing (HVM) production line, resulting in low chamber uptime, yield loss and reliability issue. In this paper, we present our results from a newly developed continuous plasma process (CPP) together with higher TCP power defume for defect reduction. With the implementation of this new CPP recipe, we have achieved 0.1% yield gain from defect reduction and ~25% RPT reduction.