High aspect ratio container edge profile tilting solution on advanced DRAM technology

We introduce a comprehensive solution to the High Aspect Ratio Container (HARC) dry etch process for the 1-beta DRAM process, achieving a sustainable, high-efficiency, and production-friendly solution. This method results in a 37% gain in Mean Time Between Clean (MTBC) and a 2.3% increase in etch chamber availability, leading to a 0.3% yield improvement. The solution includes a control method using adjustable edge RF (Radio Frequency) forward power to manage plasma drift in the chamber, and compensate edge ring height change to prevent plasma sheath distortion caused by edge ring erosion. This control method can be implemented in more advanced HARC plasma etch processes (1-gamma process) to enhance the performance.