Effect of plasma RF state 0 pulsing power on micro-loading and cross-wafer uniformity in high aspect ratio contact etch

High aspect ratio contact (HARC) etch is a critical process to build capacitors and contacts in DRAM memory. Slight change in wafer uniformity and micro-loading very often affects yield and device performance. In the paper we present the results of improving cross-wafer uniformity and micro-loading between different shapes and sizes of contacts by using a new radio frequency (RF) state 0 pulsing power. With proper setting of the state 0 pulsing power, anti-fuse under etch has been successfully eliminated.