Radiation-Hardened—AI-Accelerated Custom IC Design Methodology
In this work, a radiation hardened - AI accelerated custom IC design methodology is proposed. The methodology employs reinforcement learning (RL) to optimize the IC design process, integrating radiation dosage performance degradation assessments and radiation-hardened-by-design (RHBD) MOSFET cell implementations at both schematic and layout levels. This approach streamlines the development of radiation-immune silicon products by embedding artificial intelligence to accelerate the design process and advanced radiation hardening strategies directly into the standard design flow. To validate the proposed framework, a charge-sensitive amplifier (CSA) based on a folded-cascode architecture is designed and assessed in a 180 nm standard CMOS process, demonstrating the efficiency of the methodology in radiation-resilient analog front-end systems.
Authors
- S. Karipidis
- Vasiliki Gogolou (ORCID: https://orcid.org/0000-0003-3596-4814)
- T. Noulis (ORCID: https://orcid.org/0000-0002-1867-7488)
- E. Papageorgiou (ORCID: https://orcid.org/0009-0007-6237-4250)
- Anastasios Michailidis (ORCID: https://orcid.org/0000-0002-0005-2316)
Institutions
- Aristotle University of Thessaloniki (GR)
Publication Details
- Journal
- IEEE Access
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/access.2025.3574058
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.73