In-line Raman spectroscopy for semiconductors strain engineering and control : Topic/Category AM: Advanced Metrology

Raman spectroscopy has been used for decades in academic and industrial laboratories. This rapid, non-invasive and non-destructive technique provides valuable information on material properties such as composition, crystallinity, strain/stress, doping, crystallographic orientation and structural type. Recent advancements in instrumentation have demonstrated the potential of Raman spectroscopy to meet the demands of the semiconductor industry, leading to a significant increase interest in using it as an in-line metrology solution. In this work, we present specific use cases of Raman spectroscopy for in-line metrology in the semiconductor field. More precisely, we evaluate strain/stress and crystalline quality of ultrathin Si and Ge films at the wafer scale. This study highlights the relevance of Raman spectroscopy as an in-line metrology solution in cleanroom environments for semiconductor manufacturing.

Authors

Institutions

Publication Details

Published
2025-05-05
DOI
https://doi.org/10.1109/asmc64512.2025.11010779
Primary Topic
Spectroscopy Techniques in Biomedical and Chemical Research
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

In-line Raman spectroscopy for semiconductors strain engineering and control : Topic/Category AM: Advanced Metrology

Emmanuel Nolot, A. Pongrácz, Bálint Éles, Van‐Hoan Le et al.
Spectroscopy Techniques in Biomedical and Chemical Research
article

In-line Raman spectroscopy for semiconductors strain engineering and control : Topic/Category AM: Advanced Metrology

Emmanuel Nolot, A. Pongrácz, Bálint Éles, Van‐Hoan Le, V. Loup, D. Barge, Amal Sediri, M. Gallard, Róbert Bolla, Pauline Hauchecorne, Pierre Bellanger, Leila Badeeb, Balázs Gombkötő, J. Sturm, Bálint Somogyi, Nicolas Laurent, György Nádudvari, Zsolt Szekrényes, Jean-Michel Hartmann, Réka Petrovszki, Maximilien Dallery, Anikó Ildikó Faragó
article en

Abstract

Raman spectroscopy has been used for decades in academic and industrial laboratories. This rapid, non-invasive and non-destructive technique provides valuable information on material properties such as composition, crystallinity, strain/stress, doping, crystallographic orientation and structural type. Recent advancements in instrumentation have demonstrated the potential of Raman spectroscopy to meet the demands of the semiconductor industry, leading to a significant increase interest in using it as an in-line metrology solution. In this work, we present specific use cases of Raman spectroscopy for in-line metrology in the semiconductor field. More precisely, we evaluate strain/stress and crystalline quality of ultrathin Si and Ge films at the wafer scale. This study highlights the relevance of Raman spectroscopy as an in-line metrology solution in cleanroom environments for semiconductor manufacturing.

Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Semilab (Hungary) (HU), Université Grenoble Alpes (FR)
HORIZON EUROPE Framework Programme
Industry, innovation and infrastructure
Openalex Percentile: Top 91%
Spectroscopy Techniques in Biomedical and Chemical Research
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.