Theoretical analysis of current–voltage characteristics of GaN/AlN resonant tunneling diodes including electron phase relaxation in quantum well

Abstract The current–voltage ( I–V ) characteristics of GaN/AlN resonant tunneling diodes (RTDs) including the electron phase relaxation in the quantum well are calculated to investigate the potential peak-to-valley current ratio (PVCR). The calculation results show double peak structures in the I–V characteristics, which are derived from three- and two-dimensional (3D–2D) and 2D–2D resonant tunneling currents. They are changed by the phase coherence length for electrons that is influenced by the probability of electron phase relaxation or electron scattering in the quantum well. The PVCRs due to 3D–2D and 2D–2D resonant tunneling currents are estimated to be approximately 10 and 2 when the electron phase relaxation is very fast. The peak characteristics due to 2D–2D resonant tunneling currents are sharper than those due to 3D–2D resonant tunneling currents, although the PVCRs due to 2D–2D resonant tunneling currents are weakened by the valley and off-resonant currents of 3D–2D resonant tunneling currents.