Optimization of Near Infrared Transparent <i>p‐i‐</i><i>n</i> Perovskite Solar Cells with Active Area &gt;1 cm<sup>2</sup> for Four‐Terminal Perovskite/Si Tandem Solar Cells

Four‐terminal (4‐T) perovskite/silicon tandem solar cell is crucial due to the different lifetime of top near‐infrared transparent (NIRT) perovskite solar cell (PSC) and bottom silicon (Si) solar cell, and it allows for independent optimization and operation of the top and bottom subcells. Knowing the fact that Si solar cells are well established, we take the opportunity to explore NIRT‐PSC which is still reported by selective groups because of challenges associated with sputtered transparent conducting electrode (TCE) deposition. In this study, we have emphasized on passivation engineering, scalability, modifications to the absorber layer thickness, and advancements in electrode design to improve the performance of NIRT‐PSC. First, we have optimized thickness of passivating aluminum oxide (Al 2 O 3 ) for p‐i‐n PSCs device with wide bandgap (E g = 1.67 eV) perovskite absorber. We have achieved power conversion efficiency (PCE) of 20.20% with active area of 0.056 cm 2 and 19.16% with active area of 0.175 cm 2 by using an optimized thickness of Al 2 O 3 (3 nm) interlayer for opaque devices. Additionally, Al 2 O 3 passivated devices (T 80 &gt; 1600 h) demonstrated improved stability compared to control devices (T 80 ∼ 100 h) under identical measurement conditions. Building on this optimized passivation strategy, we extended the design to NIRT‐PSCs, which are crucial for 4‐T tandem solar cells. For optimized NIRT‐PSCs, (i) we have used thicker perovskite layer, as TCEs do not provide the benefit of back reflection, and (ii) metallization of transparent conducting electrodes to mitigate higher sheet resistance of TCE compared to opaque electrodes. With optimized NIRT‐PSCs, we have achieved PCE of 29.14% &amp; 26.86% for active areas of 0.175 and 1.08 cm 2 , respectively, in 4‐T perovskite/Si tandem solar cell, where the bottom Si solar cell has the PCE = 25.5%.

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Publication Details

Journal
Solar RRL
Published
2025-05-27
DOI
https://doi.org/10.1002/solr.202500163
Citations
5
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
3.65
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article

Optimization of Near Infrared Transparent p‐i‐n Perovskite Solar Cells with Active Area >1 cm2 for Four‐Terminal Perovskite/Si Tandem Solar Cells

Sudhanshu Mallick, S. K. Gupta, Kashimul Hossain, Laxmi Laxmi et al.
5 citations
Solar RRL
Perovskite Materials and Applications
3.65
article

Optimization of Near Infrared Transparent p‐i‐n Perovskite Solar Cells with Active Area >1 cm2 for Four‐Terminal Perovskite/Si Tandem Solar Cells

Sudhanshu Mallick, S. K. Gupta, Kashimul Hossain, Laxmi Laxmi, Dinesh Kabra, Sabyasachi Nayak, Ananta Paul, Mohit Kumar Singh, Manas Misra, Venkatesh G. Chityala
article en
5 citations

Abstract

Four‐terminal (4‐T) perovskite/silicon tandem solar cell is crucial due to the different lifetime of top near‐infrared transparent (NIRT) perovskite solar cell (PSC) and bottom silicon (Si) solar cell, and it allows for independent optimization and operation of the top and bottom subcells. Knowing the fact that Si solar cells are well established, we take the opportunity to explore NIRT‐PSC which is still reported by selective groups because of challenges associated with sputtered transparent conducting electrode (TCE) deposition. In this study, we have emphasized on passivation engineering, scalability, modifications to the absorber layer thickness, and advancements in electrode design to improve the performance of NIRT‐PSC. First, we have optimized thickness of passivating aluminum oxide (Al 2 O 3 ) for p‐i‐n PSCs device with wide bandgap (E g = 1.67 eV) perovskite absorber. We have achieved power conversion efficiency (PCE) of 20.20% with active area of 0.056 cm 2 and 19.16% with active area of 0.175 cm 2 by using an optimized thickness of Al 2 O 3 (3 nm) interlayer for opaque devices. Additionally, Al 2 O 3 passivated devices (T 80 &gt; 1600 h) demonstrated improved stability compared to control devices (T 80 ∼ 100 h) under identical measurement conditions. Building on this optimized passivation strategy, we extended the design to NIRT‐PSCs, which are crucial for 4‐T tandem solar cells. For optimized NIRT‐PSCs, (i) we have used thicker perovskite layer, as TCEs do not provide the benefit of back reflection, and (ii) metallization of transparent conducting electrodes to mitigate higher sheet resistance of TCE compared to opaque electrodes. With optimized NIRT‐PSCs, we have achieved PCE of 29.14% &amp; 26.86% for active areas of 0.175 and 1.08 cm 2 , respectively, in 4‐T perovskite/Si tandem solar cell, where the bottom Si solar cell has the PCE = 25.5%.

Solar RRLVol. 9(12)
Indian Institute of Technology Bombay (IN)
Openalex Percentile: Top 7%
Perovskite Materials and Applications
3.65
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