Limiting characteristics of silicon diode temperature sensors for determining the maximum temperature with specified measurement accuracy

This work proposes criteria for establishing a set of electrophysical and structural parameters for silicon-based diode temperature sensors that maximize the sensors' operating temperature while maintaining a specified measurement accuracy. We derived equations from these criteria and developed a mapping graph to illustrate the limiting characteristics. The findings indicate that the operating temperatures of diode temperature sensors can be enhanced by optimizing dopant concentrations and operating currents. Through 3D mapping graphs, we analyzed the maximum operating temperatures and measurement errors of diode temperature sensors. The results demonstrate the potential for diode temperature sensors to operate accurately at temperatures exceeding certain thresholds, as well as at lower temperatures with acceptable accuracy.