An ab initio study of structural and optoelectronic properties of YBiS <sub>3</sub> monolayer
A first-principle investigation of a novel YBiS 3 monolayer has been carried out using density functional theory (DFT). The optimized structure of the YBiS 3 monolayer has positive phonon frequencies. The electronic characteristics of a monolayer have been examined utilizing a mixed exchange-correlation functional. This monolayer exhibits a semiconductive character with an indirect energy gap of 2.37[Formula: see text]eV. The optical properties of the YBiS 3 monolayer have been carried out by norm-conserving pseudo-potentials. YBiS 3 monolayer exhibits continuous absorption from the visible to the UV region. From the band edge positions, the YBiS 3 monolayer is analyzed for photocatalytic activities. The results confirm that the YBiS 3 monolayer is applicable for optoelectronic devices and photocatalysis activity.
Authors
- Yashasvi Naik (ORCID: https://orcid.org/0000-0001-6469-5815)
- Riddhi Desai (ORCID: https://orcid.org/0009-0006-4404-0719)
- P. B. Thakor (ORCID: https://orcid.org/0000-0001-8146-7988)
- Disha Mehta (ORCID: https://orcid.org/0000-0001-7996-1063)
Institutions
- Veer Narmad South Gujarat University (IN)
Publication Details
- Journal
- International Journal of Modern Physics B
- Published
- 2025-05-26
- DOI
- https://doi.org/10.1142/s0217979225400685
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00