Room temperature CW operation of 1.3 μm quantum dot triple-lattice photonic crystal surface-emitting lasers with buried structure

The first room-temperature continuous-wave operation of InAs/GaAs quantum dot (QD) photonic crystal surface-emitting laser (PCSEL) has been demonstrated based on the triple-lattice structure. The triple-lattice resonator allows the PCSEL to have sufficiently low optical loss to lase even with a compact photonic crystal (PC) size of 100 μm × 100 μm. The fabricated QD-PCSEL exhibits a threshold current of 139 mA and a side-mode suppression ratio (SMSR) of 37 dB. It shows a characteristic temperature of 96 K and a wavelength temperature dependence of 0.09 nm/K. Proton implantation was employed in the p-cladding layer to reduce the threshold current to 80 mA. The lasing wavelength shows a clear dependence on the lattice constant, with an increase of about 15 nm in the lasing wavelength for every 5 nm increase in the lattice constant. These results supply valuable insights into designing and optimizing GaAs-based 1.3μm high-performance surface-emitting lasers.