Radiation-Hardened 14T SRAM Cell Design for Double Node Upset Immunity in Space Applications

Deep sub-micron memory technologies are essential parts of space-based electronics because of their vulnerability to Both double-end upsets (DNUs) and single-event upsets (SEUs). High-energy charged particles propagating through space can temporarily affect memory elements by disrupting the charge accumulated at critical nodes. A sturdy radiation-hardened-design (RHBD) SEI-14T SRAM cell, created especially for satellite and space systems, is presented in this work. The SEI-14T's dual-junction circuit layout lowers SEUs and DNUs across all sensing nodes with a self-correcting, state-reset feedback mechanism. Additionally, by maximizing the spatial spacing of the sensing zones, the design improves recovery from residual upset pairs. The performance advantages of the SEI-14T are illustrated by comparison with various state-of-the-art radiation-hardened memory cells, including the Quatro-10T, RHM-12T, RHD-12T, RSP-14T, RHPD-12T, RH-14T, EDP-12T, and QCCS-12T. The SEI-14T stands out with its remarkable read and write stability. At a supply voltage of 0.8V, the SEI-14T outperforms current designs by reducing steady-state power consumption by 20.82%, read access time by 23%, and write access time by 12.28%. In addition, the critical charge of the SEI-14T is significantly higher than that of alternative memory cells, with values that are 8.85, 6.56, 3.4, 5.75, 2.54, 2.47, 1.81, 1.63, and 1.44 times higher than those of 6T-SRAM, Quatro-10T, RHM-12T, RHD-12T, RSP-14T, RHPD-12T, RH-14T, EDP-12T, and QCCS-12T, respectively.