Pulsed laser deposition of highly oriented Sb<sub>2</sub>Te<sub>3</sub> and GeTe–Sb<sub>2</sub>Te<sub>3</sub> thin films on amorphous SiO<sub><i>x</i></sub> layers at low temperatures
c -Axis oriented Sb 2 Te 3 thin films and GeTe–Sb 2 Te 3 superlattices by a fast pulsed laser deposition procedure at ≤150 °C involving an Sb 2 Te 3 seed layer.
Authors
- S. Cremer (ORCID: https://orcid.org/0009-0002-6723-0620)
- Andriy Lotnyk (ORCID: https://orcid.org/0000-0002-0000-9334)
- N. Braun (ORCID: https://orcid.org/0000-0002-6328-3330)
- Lorenz Kienle (ORCID: https://orcid.org/0000-0002-9638-3290)
- Jens Bauer (ORCID: https://orcid.org/0000-0002-4339-8296)
- Vladimir Roddatis (ORCID: https://orcid.org/0000-0002-9584-0808)
- Lennart Voß (ORCID: https://orcid.org/0009-0007-7811-1922)
Institutions
- Christian-Albrechts-Universität zu Kiel (DE)
- GFZ Helmholtz Centre for Geosciences (DE)
- Leibniz Institute of Surface Engineering (DE)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00269a
- Citations
- 7
- Primary Topic
- Phase-change materials and chalcogenides
- Type
- article
- Field-Weighted Citation Impact
- 3.62
Funders
- Deutsche Forschungsgemeinschaft
- European Regional Development Fund