Influence of hydrostatic pressure and temperature on the electronic properties of doped GaAs/Al_0.3Ga_0.7As tetrapodal quantum dots

This study investigates the impact of quantum confinement and impurity effects in GaAs/Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf>As core-shell tetrapodal quantum dots (CSTQDs). Employing finite element method (FEM) and the effective mass approach (EMA), we explore the intricate interplay between nanocrystal geometry, impurity position, barrier composition, and external perturbations such as temperature and hydrostatic pressure. Our findings demonstrate significant tunability of electronic properties, particularly the impurity binding energy (BE), through precise control of these parameters. Building upon the pioneering work of Michael J. Enright et al. (2020) [1] on the epitaxial growth of these unique nanostructures, this research delves into their potential for advanced optoelectronic applications by elucidating the underlying physics of impurity states.