Design of a Low Noise Amplifier using a Chebyshev-Type Bandpass Coupled Resonator Filter with Distributed Elements from 2 GHz to 3 GHz

In this work, we present the design and implementation of a low-noise amplifier (LNA) incorporating coupled resonator band-pass filters at the input and output stages. To design this amplifier, we used the pseudomorphic HEMT RF transistor ATF-34143. The results show that the modeled LNA is unconditionally stable across the entire frequency band [2–3] GHz. Furthermore, it offers a maximum gain of up to 17 dB, with a noise figure (NFmin) not exceeding 2.29 dB, and low input and output reflection coefficients (S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</inf> and S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</inf>), which remain below -10 dB across the entire band. The use of distributed elements, such as the coupled resonator filter, simplifies the manufacturing process and reduces costs, requiring only a localized stability resistor. This cost-effective and efficient design makes the modeled LNA suitable for various applications, including wireless communications, the Internet of Things (IoT), telemetry systems, and remote monitoring.