Energy of a donor impurity within a quantum dot embedded in a nanorod under an electric field

When subjected to an electric field, we theoretically investigate the donor impurity energy, by means of the finite element method in the context of the effective mass approximation. This electronic property is computed for a CdSe quantum dot as a dependence on impurity position and dot size under various electric field strengths. The outcomes show that the single dopant energy reaches a minimum at the center of the quantum dot and decreases significantly as the dot size decreases due to the quantum confinement effect. These findings can be leveraged to enhance electronic devices, particularly those based on doped CdSe/CdS structures.