Impact study of the dimension and concentration on electronic property in In<sub>x</sub>Ga<sub>1−x</sub>As/GaAs lens-shaped quantum dot
This study examines the electronic characteristics of a lens-shaped quantum dot (LSQD) composed of In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</inf>As/GaAs operating within effective-mass and one parabolic approximations framework (AMEP) and considering a finite confinement potential. We explore the complex interplay between impurity position, barrier composition and dimensional variation to improve the electronic properties of the system. The binding energy (BE) is analyzed Depending on the quantum dot’s height and radius, revealing a strong dependence on these dimensions. Furthermore, we investigate the impact of indium concentration on binding energy, providing insights into its role in tailoring QD electronic properties.
Authors
- M. Jaafar (ORCID: https://orcid.org/0000-0002-9086-6187)
- M. Jaouane (ORCID: https://orcid.org/0000-0002-5779-8055)
- A. Ed‐Dahmouny (ORCID: https://orcid.org/0000-0003-4390-853X)
- K. El‐Bakkari (ORCID: https://orcid.org/0000-0003-3649-7373)
- Sali Ahmed (ORCID: https://orcid.org/0000-0002-3310-7977)
- H. Azmi
- R. Arraoui (ORCID: https://orcid.org/0000-0002-4974-2617)
- A. Fakkahi (ORCID: https://orcid.org/0000-0003-0025-9066)
Institutions
- Agence pour le Développement et la Réhabilitation de la Ville de Fès (MA)
Publication Details
- Published
- 2025-05-15
- DOI
- https://doi.org/10.1109/iraset64571.2025.11008009
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00