Expanding the Scope of Mo(III) Precursor Molecules for Vapor Phase Growth of Mo‐Based Materials: Mo(III) Guanidinate

The synthesis and characterization of tris(N,N'-di-isopropyl-2-dimethylamido-guanidinate)molybdenum(III), Mo(iPr-GND)<sub>3</sub> is reported. This complex expands the known scope of tris(guanidinate)M(III) complexes to include Mo, and adds to the very limited knowledge of homoleptic mononuclear Mo(III) coordination complexes. Volatility of Mo(iPr-GND)<sub>3</sub> is demonstrated via thermogravimetric analysis (TGA), hinting at potential applications as a molecular precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD). Proof of concept aerosol-assisted CVD growth with Mo(iPr-GND)<sub>3</sub> as a single-source precursor yielded MoC<sub>x</sub>N<sub>y</sub> films. The results indicate a potential utility for Mo(iPr-GND)<sub>3</sub> as a volatile precursor for ALD and CVD, with prospective use as a single-source precursor for growth of molybdenum nitrides and carbonitrides.

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Journal
Chemistry - A European Journal
Published
2025-05-26
DOI
https://doi.org/10.1002/chem.202500244
Primary Topic
Semiconductor materials and devices
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article
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article

Expanding the Scope of Mo(III) Precursor Molecules for Vapor Phase Growth of Mo‐Based Materials: Mo(III) Guanidinate

Glenn P. A. Yap, John H. Moore, Titel Jurca, S. Lee et al.
Chemistry - A European Journal
Semiconductor materials and devices
article

Expanding the Scope of Mo(III) Precursor Molecules for Vapor Phase Growth of Mo‐Based Materials: Mo(III) Guanidinate

Glenn P. A. Yap, John H. Moore, Titel Jurca, S. Lee, Taylor M. Currie, Justin A. Arami, Diego R. Javier‐Jiménez, Lisa McElwee‐White, A Brodie, Bhumika
article en

Abstract

The synthesis and characterization of tris(N,N'-di-isopropyl-2-dimethylamido-guanidinate)molybdenum(III), Mo(iPr-GND)<sub>3</sub> is reported. This complex expands the known scope of tris(guanidinate)M(III) complexes to include Mo, and adds to the very limited knowledge of homoleptic mononuclear Mo(III) coordination complexes. Volatility of Mo(iPr-GND)<sub>3</sub> is demonstrated via thermogravimetric analysis (TGA), hinting at potential applications as a molecular precursor for chemical vapor deposition (CVD) and atomic layer deposition (ALD). Proof of concept aerosol-assisted CVD growth with Mo(iPr-GND)<sub>3</sub> as a single-source precursor yielded MoC<sub>x</sub>N<sub>y</sub> films. The results indicate a potential utility for Mo(iPr-GND)<sub>3</sub> as a volatile precursor for ALD and CVD, with prospective use as a single-source precursor for growth of molybdenum nitrides and carbonitrides.

Chemistry - A European JournalVol. 31(37)
University of Central Florida (US), University of Florida (US), University of Delaware (US)
Openalex Percentile: Top 90%
Semiconductor materials and devices
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Expanding the Scope of Mo(III) Precursor Molecules for Vapor Phase Growth of Mo‐Based Materials: Mo(III) Guanidinate — Glenn P. A. Yap, John H. Moore, et al. · Chemistry - A European Journal (2025) | TGRS Research Map | TGRS