A Passive and Scalable High-Order Neuromorphic Circuit Enabled by Mott Memristors
In this study, VO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Mott memristors have been successfully fabricated, leading to the proposal of a passive and scalable high-order neural circuit. This circuit consists of two coupled VO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Mott memristors, two resistors, and three capacitors. The proposed high-order neural circuit demonstrates 11 distinct firing behaviors similar to those of biological neurons, along with controllable burst firing patterns. The spikes, inter-spike interval (ISI) within a burst, and the quiescence interval between bursts can be adjusted by varying the capacitance and resistance values. Additionally, this circuit operates without the need for a bias supply or inductors, enhancing its scalability. This design not only improves circuit interconnection but also effectively reduces power consumption, providing a solid foundation for the development of spiking neural networks (SNNs).
Authors
- Weihua Liu (ORCID: https://orcid.org/0000-0001-5748-3021)
- Chuanyu Han (ORCID: https://orcid.org/0000-0002-4732-0429)
- Li Geng (ORCID: https://orcid.org/0000-0003-4002-9281)
- Xin Li (ORCID: https://orcid.org/0000-0002-7167-0277)
- Xiaohui Wu (ORCID: https://orcid.org/0000-0003-3003-2073)
- Shujing Zhao (ORCID: https://orcid.org/0000-0003-1087-1662)
- Zhijie Lin (ORCID: https://orcid.org/0009-0005-3334-4381)
Institutions
- Xi'an Jiaotong University (CN)
Publication Details
- Journal
- IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/jxcdc.2025.3573709
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China