A 16.7-dBm 245-to-295-GHz Power Amplifier With a Four-Way Power Combiner in 0.13-μm SiGe
This letter presents the design and experimental characterization of a power amplifier (PA) (245–295 GHz) with power added efficiency (PAE) of 4.54% and saturated output power of 16.7 dBm using 0.13-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $</tex-math> </inline-formula>m silicon-germanium (SiGe) technology. The realized two-stage PA differential cascode cells are combined by a four-way transmission lines (T-lines)-based combiner with 1.16 dB of loss. The size of the overall chip is 1.09mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including the pads and baluns. The presented PA achieves 2 dB higher saturated output power and 1.39% higher PAE than the state-of-the-art silicon-based PAs.
Authors
- Ahmet Çağrı Ulusoy (ORCID: https://orcid.org/0000-0001-5718-2827)
- Kaan Balaban (ORCID: https://orcid.org/0009-0000-4573-2465)
- İbrahim Kağan Aksoyak (ORCID: https://orcid.org/0000-0001-9418-1479)
Institutions
- Karlsruhe Institute of Technology (DE)
Publication Details
- Journal
- IEEE Microwave and Wireless Technology Letters
- Published
- 2025-05-26
- DOI
- https://doi.org/10.1109/lmwt.2025.3568205
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.46