A 7.3–9.5-GHz Cryogenic LNA Based on Passive Noise Cancellation for Qubit State Readout

A cryogenic low-voltage, broadband low-noise amplifier(LNA) has been designed for qubit state readout systems. The proposed LNA utilizes passive components for noise cancellation. A tri-coupled transformer is utilized to simultaneously achieve broadband input impedance matching and noise matching. Additionally, it incorporates capacitive feedback and an in-phase transformer to effectively cancel noise. Implemented in 28-nm bulk CMOS technology and verified at 10 K, the LNA achieves a maximum gain of 26.7 dB, a −3-dB bandwidth of 2.2 GHz, a lowest noise temperature (NT) of 25 K, a power consumption of 4.05 mW at 0.6-V supply voltage, and a figure of merit (FoM) of 0.12 dB/mW/ph, which is comparable with the recent works.

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Publication Details

Journal
IEEE Microwave and Wireless Technology Letters
Published
2025-05-26
DOI
https://doi.org/10.1109/lmwt.2025.3570110
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
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article

A 7.3–9.5-GHz Cryogenic LNA Based on Passive Noise Cancellation for Qubit State Readout

Wenhui Huang, Yaoyu Li, Yuanjin Zheng, Hanjun Jiang et al.
IEEE Microwave and Wireless Technology Letters
Advancements in Semiconductor Devices and Circuit Design
article

A 7.3–9.5-GHz Cryogenic LNA Based on Passive Noise Cancellation for Qubit State Readout

Wenhui Huang, Yaoyu Li, Yuanjin Zheng, Hanjun Jiang, Yanshu Guo, Zhihua Wang, Tian Tian
article en

Abstract

A cryogenic low-voltage, broadband low-noise amplifier(LNA) has been designed for qubit state readout systems. The proposed LNA utilizes passive components for noise cancellation. A tri-coupled transformer is utilized to simultaneously achieve broadband input impedance matching and noise matching. Additionally, it incorporates capacitive feedback and an in-phase transformer to effectively cancel noise. Implemented in 28-nm bulk CMOS technology and verified at 10 K, the LNA achieves a maximum gain of 26.7 dB, a −3-dB bandwidth of 2.2 GHz, a lowest noise temperature (NT) of 25 K, a power consumption of 4.05 mW at 0.6-V supply voltage, and a figure of merit (FoM) of 0.12 dB/mW/ph, which is comparable with the recent works.

IEEE Microwave and Wireless Technology LettersVol. 35(9)
Nanyang Technological University (SG), Tsinghua University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 90%
Advancements in Semiconductor Devices and Circuit Design
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