Improved parameter extraction method of Schottky diode model for microwave energy transfer rectifier circuit

A novel parameter extraction method for the Schottky diode’s equivalent-circuit model is proposed, and used to design high-efficiency microwave rectifier circuits. This method only use the Vector Network Analyzer (VNA) to extract the nonlinear intrinsic parameters and linear parasitic parameters in the equivalent circuit through the S-parameters of Schottky diode ports measured under different bias voltages. Taking the Schottky diode HSMS270B as an example, the parameters are extracted and modeled by this method, and it is verified that the simulation results are strongly correlated with the measured results in a microwave rectifier circuit with the operating frequency of 2.45 GHz, particularly in terms of the relationship between the output voltage of the rectifier circuit and the input power.