Digital twin of intermediate layer temperatures observation of IGBT modules

IGBT module requires accurately intermediate layer temperatures (ILT) monitoring to ensure system safety and reliability. Considering critical failure factor of solder layer voids, this paper implements real-time monitoring to IGBT module ILT using DT. By deriving the nonlinear relationship between thermal resistance of solder layer and junction temperature, a mathematical model is refined to more precisely reflect the actual thermal behavior of IGBT. A nonlinear intermediate layer temperatures observer is designed to further improve the accuracy. Experimental validation demonstrates that, the proposed observer significantly enhances the precision with an error of only 0.1% compared to traditional methods.

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Publication Details

Journal
IEICE Electronics Express
Published
2025-05-26
DOI
https://doi.org/10.1587/elex.22.20250257
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

Digital twin of intermediate layer temperatures observation of IGBT modules

Xinyu Cai, Mingxing Du, Cong Zhang
IEICE Electronics Express
Silicon Carbide Semiconductor Technologies
article

Digital twin of intermediate layer temperatures observation of IGBT modules

Xinyu Cai, Mingxing Du, Cong Zhang
article en

Abstract

IGBT module requires accurately intermediate layer temperatures (ILT) monitoring to ensure system safety and reliability. Considering critical failure factor of solder layer voids, this paper implements real-time monitoring to IGBT module ILT using DT. By deriving the nonlinear relationship between thermal resistance of solder layer and junction temperature, a mathematical model is refined to more precisely reflect the actual thermal behavior of IGBT. A nonlinear intermediate layer temperatures observer is designed to further improve the accuracy. Experimental validation demonstrates that, the proposed observer significantly enhances the precision with an error of only 0.1% compared to traditional methods.

IEICE Electronics ExpressVol. 22(13)
Tianjin University of Technology (CN)
Natural Science Foundation of Tianjin City
Climate action
Openalex Percentile: Top 90%
Silicon Carbide Semiconductor Technologies
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