TiSe2 is a band insulator created by lattice fluctuations, not an excitonic insulator

TiSe2 is a narrow-gap insulator with a rich array of unique properties. In addition to being a superconductor under certain modifications, it is commonly thought to be a rare realisation of an excitonic insulator. Below 200 K, TiSe2 undergoes a transition from a high-symmetry ( $$P\bar{3}m1$$ ) phase to a low-symmetry ( $$P\bar{3}c1$$ ) charge density wave (CDW). Here we establish that it is indeed an insulator in both $$P\bar{3}m1$$ and $$P\bar{3}c1$$ phases. However, the insulating state is driven not by excitonic effects but by symmetry-breaking. In the CDW phase it is static. At high temperature, thermally driven instantaneous deviations from $$P\bar{3}m1$$ break the symmetry on the characteristic time scale of a phonon. Even though the time-averaged lattice structure assumes $$P\bar{3}m1$$ symmetry, the time-averaged energy band structure is closer to the CDW phase – a rare instance of a metal-insulator transition induced by dynamical symmetry breaking. We establish these conclusions from quasiparticle self-consistent GW (QSGW) and many-body calculations (QS $$G\widehat{W}$$ ), in combination with molecular dynamics simulations to capture the effects of thermal disorder. The many-body theory includes explicitly ladder diagrams in the polarizability, which incorporates excitonic effects in an ab initio manner. We find that the excitonic modification to the potential is weak, ruling out the possibility that TiSe2 is an excitonic insulator.

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Publication Details

Journal
npj Computational Materials
Published
2025-05-26
DOI
https://doi.org/10.1038/s41524-025-01631-4
Citations
7
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
5.11

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article

TiSe2 is a band insulator created by lattice fluctuations, not an excitonic insulator

Ross E. Larsen, Mark van Schilfgaarde, Swagata Acharya, Matthew D. Watson et al.
7 citations
npj Computational Materials
Chalcogenide Semiconductor Thin Films
5.11
article

TiSe2 is a band insulator created by lattice fluctuations, not an excitonic insulator

Ross E. Larsen, Mark van Schilfgaarde, Swagata Acharya, Matthew D. Watson, Dimitar Pashov
article en
7 citations

Abstract

TiSe2 is a narrow-gap insulator with a rich array of unique properties. In addition to being a superconductor under certain modifications, it is commonly thought to be a rare realisation of an excitonic insulator. Below 200 K, TiSe2 undergoes a transition from a high-symmetry ( $$P\bar{3}m1$$ ) phase to a low-symmetry ( $$P\bar{3}c1$$ ) charge density wave (CDW). Here we establish that it is indeed an insulator in both $$P\bar{3}m1$$ and $$P\bar{3}c1$$ phases. However, the insulating state is driven not by excitonic effects but by symmetry-breaking. In the CDW phase it is static. At high temperature, thermally driven instantaneous deviations from $$P\bar{3}m1$$ break the symmetry on the characteristic time scale of a phonon. Even though the time-averaged lattice structure assumes $$P\bar{3}m1$$ symmetry, the time-averaged energy band structure is closer to the CDW phase – a rare instance of a metal-insulator transition induced by dynamical symmetry breaking. We establish these conclusions from quasiparticle self-consistent GW (QSGW) and many-body calculations (QS $$G\widehat{W}$$ ), in combination with molecular dynamics simulations to capture the effects of thermal disorder. The many-body theory includes explicitly ladder diagrams in the polarizability, which incorporates excitonic effects in an ab initio manner. We find that the excitonic modification to the potential is weak, ruling out the possibility that TiSe2 is an excitonic insulator.

npj Computational MaterialsVol. 11(1)
National Laboratory of the Rockies (US), King's College London (GB), University of Colorado Boulder (US), Diamond Light Source (GB)
U.S. Department of Energy, National Energy Research Scientific Computing Center, Office of Science, Office of Energy Efficiency and Renewable Energy, Basic Energy Sciences, Office of Energy Efficiency
Openalex Percentile: Top 5%
Chalcogenide Semiconductor Thin Films
5.11
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