Research on Resistive Switching and Synaptic Performance of CeO_<i>x</i>/TaO_<i>x</i>-Based Memristor

Dual-terminal memristors have emerged as pivotal candidates for next-generation nonvolatile memory due to their fast switching and low energy consumption. In this study, we fabricated Ag/CeOx/TaOx/FTO and Ag/TaOx/FTO memristors and systematically investigated their resistive switching behaviors and synaptic functionalities. The incorporation of a CeOx interlayer significantly enhances oxygen vacancy concentration, reduces the SET/RESET voltages (0.55 V/–2 V vs 2 V/–3 V for Ag/TaOx/FTO), and broadens the memory window (resistance ratio >100). Moreover, the CeOx layer stabilizes oxygen vacancy migration, achieving excellent endurance (>1000 cycles) and retention stability (CV < 17% over 104s). Notably, the device emulates synaptic plasticity, including long-term potentiation/depression (LTP/LTD), spike-timing-dependent plasticity (STDP), and paired-pulse facilitation (PPF), with high linearity. These advancements position the Ag/CeOx/TaOx/FTO memristor as a promising platform for energy-efficient neuromorphic computing.