Field Effect Transistors Based on α‐MoO₃ Exfoliated Crystals: Fabrication, Functionalization and Characterization

α‐MoO 3 field effect transistors (FETs), exhibiting n‐type behavior, are fabricated. These devices are based on α‐MoO 3 exfoliated crystals, which are produced from bulk crystals by mechanical exfoliation and then transferred onto Si/SiO 2 substrates, through a two‐step clean transfer process. The FET devices are then achieved by depositing three electrical contacts in a bottom‐gate geometry, using photolithography, metal sputtering deposition, and lift‐off. Thermal treatments in different atmospheres (vacuum and air) are performed to tune the electrical properties of the channel material by controlling the oxygen vacancy concentration. Preliminary electrical characterization of a modified device reveals a modulation of channel resistance with the gate bias, in agreement with the characteristic n‐type behavior of α‐MoO 3 . Notably, it exhibits a promising electron mobility value of ≈0.117 cm 2 V −1 s −1 , which is comparable to values reported for n‐type FETs based on a single/few atomic layers of α‐MoO 3 and MoS 2 . Additionally, the transfer curves exhibit anticlockwise hysteresis effects, likely attributed to the adsorption/desorption processes of oxygen molecules on the channel surface, promoted by the applied gate voltage.