C‐band All III‐Arsenide InAs Quantum Dot Lasers on InP Using Low Indium Composition Partial Capping
ABSTRACT This study demonstrates the growth of InAs quantum dots (QDs) on InP substrates using an all group III‐arsenide approach in molecular beam epitaxy (MBE) with a low‐indium‐composition InAlGaAs partial capping layer. Real‐time curvature measurements confirm effective strain compensation during multilayer QD growth, enabling precise control of emission wavelength and structural stability. The fabricated lasers exhibited successful operation at a telecommunication C‐band.
Authors
- Yasuhiko Arakawa (ORCID: https://orcid.org/0000-0003-0373-9452)
- Jihye Jung (ORCID: https://orcid.org/0000-0001-9186-7176)
- Masahiro Kakuda (ORCID: https://orcid.org/0009-0009-4786-8097)
- Jinkwan Kwoen (ORCID: https://orcid.org/0000-0002-5273-3981)
Institutions
- The University of Tokyo (JP)
Publication Details
- Journal
- Electronics Letters
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1049/ell2.70308
- Citations
- 1
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- New Energy and Industrial Technology Development Organization
- Japan Society for the Promotion of Science
- Japan Science and Technology Agency
- Moonshot Research and Development Program