Analysis of Segregation and Impurity Clusters in Defects with Nano/Sub-Nanometer Scale in Semiconductor-Device Related Materials
Atom probe tomography enables elemental distribution analysis in various regions in semiconductor-device related materials. This paper introduces the segregation and precipitation of impurities on specific grain boundaries in Si, and the Cu diffusion suppression effect of additive elements in Cu interconnect layers.
Authors
- Yutaka Ohno (ORCID: https://orcid.org/0000-0003-3998-4409)
- Yasuyoshi Nagai
- Yasuo Shimizu (ORCID: https://orcid.org/0000-0002-6844-8165)
- Koji Inoue (ORCID: https://orcid.org/0000-0003-3926-0646)
Institutions
- Tohoku University (JP)
Publication Details
- Journal
- Journal of the Japan Institute of Metals and Materials
- Published
- 2025-05-24
- DOI
- https://doi.org/10.2320/jinstmet.jb202303
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00