Structure of Porous Silicon Formed on n-Type Silicon Wafer

Porous silicon is one of attractive light-emitting materials nowadays. The advantage of silicon-related light emitting materials is an environmental-friendly property and low cost of the material. Light-emitting porous silicon has extensively been studied for more than twenty years, mainly being formed on a p-type silicon wafer. The n-type silicon is also of importance because the pn junction, made of the two types of silicon, is a key structure for electronic devices. This article reports the formation of porous silicon formed on n-type silicon wafers and shows the surface and cross-sectional structures observed by a scanning electron microscope. The formation characteristics of porous silicon on n-type silicon wafers are discussed.

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Publication Details

Journal
World Journal of Engineering and Technology
Published
2025-01-01
DOI
https://doi.org/10.4236/wjet.2025.132018
Primary Topic
Silicon Nanostructures and Photoluminescence
Type
article
Field-Weighted Citation Impact
0.00
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article

Structure of Porous Silicon Formed on n-Type Silicon Wafer

Masato Ohmukai
World Journal of Engineering and Technology
Silicon Nanostructures and Photoluminescence
article

Structure of Porous Silicon Formed on n-Type Silicon Wafer

Masato Ohmukai
article en

Abstract

Porous silicon is one of attractive light-emitting materials nowadays. The advantage of silicon-related light emitting materials is an environmental-friendly property and low cost of the material. Light-emitting porous silicon has extensively been studied for more than twenty years, mainly being formed on a p-type silicon wafer. The n-type silicon is also of importance because the pn junction, made of the two types of silicon, is a key structure for electronic devices. This article reports the formation of porous silicon formed on n-type silicon wafers and shows the surface and cross-sectional structures observed by a scanning electron microscope. The formation characteristics of porous silicon on n-type silicon wafers are discussed.

World Journal of Engineering and TechnologyVol. 13(02)
Kobe University of Fashion and Design (JP), National Institute of Technology, Akashi College (JP)
Openalex Percentile: Top 92%
Silicon Nanostructures and Photoluminescence
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