Predictive Mobility Model for β-Ga2O3 at Cryogenic Temperature

In this work, the transport properties of charge carriers in β-Ga⁢2O⁢3 were investigated, along with intrinsic physical mechanisms such as lattice vibrations, impurity scattering, and interfacial effects. The high-field behavior of carrier mobility was characterized using vacuum deposition techniques for the fabrication of electrodes with ohmic contacts, and the Hall effect measurement system was employed to test the temperature-dependent mobility of Sn-doped n-type (100) and (001) β-Ga⁢2O⁢3 samples at a cryogenic temperature. A predictive model for β-Ga⁢2O⁢3 mobility was developed by examining the effects of the temperature on the scattering mechanisms based on a theoretical transport model. The experimental results for β-Ga⁢2O⁢3 mobility, which varied with the temperature and doping concentration, showed good agreement with the theoretical model within the temperature range of 15–300 K. The maximum discrepancy between the predictive model and the experimental data was less than 5%. This study provides valuable theoretical insights for the design and simulation of β-Ga⁢2O⁢3 devices.