Thermal Enhancement of GaN Schottky Diodes Annealed at 600°C for High Power and High Temperature RF Applications
ABSTRACT In this paper, we report the investigation of the thermal enhancement and the behaviour of GaN Schottky diodes grown by metal‐organic chemical vapor deposition (MOCVD) on sapphire substrates for RF power applications and their potential to operate under extreme temperatures. The Schottky barrier diodes show a Schottky barrier height ( ϕ B ) close to 0.93 eV and an ideality factor ( η ) near unity, with 1.03. Pt/Au anodes annealed at 500°C and 600°C show an improvement in the electrical characteristics and a breakdown voltage as high as 130 V for a drift layer thickness of 1 µm and doping of 10 16 cm −3 .
Authors
- B. Orfao (ORCID: https://orcid.org/0000-0003-4138-9537)
- Malek Zegaoui
- Amir Abdallah (ORCID: https://orcid.org/0000-0003-2649-9922)
- Hugo Bouillaud
- M. Zaknoune (ORCID: https://orcid.org/0000-0001-8195-4196)
- Guillaume Ducournau
- Yannick Roelens (ORCID: https://orcid.org/0000-0003-2451-2177)
Institutions
- Centre National de la Recherche Scientifique (FR)
- Université de Lille (FR)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- École Centrale de Lille (FR)
Publication Details
- Journal
- Electronics Letters
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1049/ell2.70307
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Université de Lille
- Equipex
- Agence Nationale de la Recherche
- Ministère de l'Education Nationale, de l'Enseignement Superieur et de la Recherche
- Centre National de la Recherche Scientifique
- Conseil Régional Hauts-de-France
- European Regional Development Fund