Electrical excitation of color centers in <i>n</i>-type diamond Schottky diodes

Color centers in diamond are promising systems for quantum technologies and nanophotonics as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission from color centers under electrical pumping in a Schottky diode configuration based on -type diamond. Hydrogen passivation allows the modification of the Schottky barrier height and improves the injection of minority charge carriers needed for the electrical pumping, while electrons are provided by the -type layer.

Authors

Institutions

Publication Details

Journal
Physical Review Applied
Published
2025-05-23
DOI
https://doi.org/10.1103/physrevapplied.23.054060
Citations
3
Primary Topic
Diamond and Carbon-based Materials Research
Type
article
Field-Weighted Citation Impact
1.55

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Electrical excitation of color centers in n-type diamond Schottky diodes

Paul Kienitz, Dmitry Yu. Fedyanin, S. Sciortino, Shannon S. Nicley et al.
3 citations
Physical Review Applied
Diamond and Carbon-based Materials Research
1.55
article

Electrical excitation of color centers in n-type diamond Schottky diodes

Paul Kienitz, Dmitry Yu. Fedyanin, S. Sciortino, Shannon S. Nicley, Paulius Pobedinskas, Ken Haenen, Tianxiao Guo, P. Haring Bolívar, Igor A. Khramtsov, Mario Agio, Florian Sledz, Assegid M. Flatae, Rozita Rouzbahani, S. Lagomarsino, Xin Jiang
article en
3 citations

Abstract

Color centers in diamond are promising systems for quantum technologies and nanophotonics as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission from color centers under electrical pumping in a Schottky diode configuration based on -type diamond. Hydrogen passivation allows the modification of the Schottky barrier height and improves the injection of minority charge carriers needed for the electrical pumping, while electrons are provided by the -type layer.

Physical Review AppliedVol. 23(5)
Istituto Nazionale di Fisica Nucleare (IT), National Academies of Sciences, Engineering, and Medicine (US), University of Siegen (DE), Instituto de Óptica "Daza de Valdés" (ES), Istituto Nazionale di Fisica Nucleare, Sezione di Firenze (IT), National Research Council (IT), University of Florence (IT), Michigan State University (US), Hasselt University (BE)
Universität Siegen, Deutsche Forschungsgemeinschaft, Fonds Wetenschappelijk Onderzoek, Universiteit Hasselt, Vlaamse regering, Institute of Nano Science and Technology, Bijzonder Onderzoeksfonds UGent, H2020 LEIT Nanotechnologies
Openalex Percentile: Top 18%
Diamond and Carbon-based Materials Research
1.55
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.