Electron charge dynamics in metal-dot QCA cell using gate reflectometry

Quantum-dot cellular automata (QCA) is a field-coupled computational paradigm [C. S. Lent et al., Nanotechnology 4, 49 (1993)] that encodes binary information through the positions of single electrons within quantum-dot cells. In this work, we present experimental results obtained using RF gate reflectometry on two coupled floating metal double dots (DDs). We demonstrate that a single gate sensor can effectively capture the behavior of both DDs, providing detailed insights into their charging dynamics. The observed variations in the reflected signal directly correspond to changes in electron tunneling rates. Experiments reveal that at low temperatures (T ≈ 0.35 K), tunneling within DDs in the non-polarized state of a QCA cell becomes strongly correlated, leading to low-frequency (≤30 kHz) thermally driven random fluctuations in cell polarization. However, the cell remains capable of fast and robust switching when driven by an input signal. Furthermore, we provide the first direct experimental measurement of temperature effects on QCA switching. At elevated temperatures, where the Coulomb blockade is weakened, we observe degradation in the abruptness of the switching, which could lead to signal loss across a chain of cells unless appropriate clocking mechanisms are implemented.

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Publication Details

Journal
APL Electronic Devices
Published
2025-05-23
DOI
https://doi.org/10.1063/5.0271627
Primary Topic
Quantum-Dot Cellular Automata
Type
article
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article

Electron charge dynamics in metal-dot QCA cell using gate reflectometry

Alexei O. Orlov, Craig S. Lent, G. Tóth, Jonathan Chisum et al.
APL Electronic Devices
Quantum-Dot Cellular Automata
article

Electron charge dynamics in metal-dot QCA cell using gate reflectometry

Alexei O. Orlov, Craig S. Lent, G. Tóth, Jonathan Chisum, Gergo P. Szakmany, Mohammad Istiaque Rahaman, Gregory L. Snider, X. Jehl
article en

Abstract

Quantum-dot cellular automata (QCA) is a field-coupled computational paradigm [C. S. Lent et al., Nanotechnology 4, 49 (1993)] that encodes binary information through the positions of single electrons within quantum-dot cells. In this work, we present experimental results obtained using RF gate reflectometry on two coupled floating metal double dots (DDs). We demonstrate that a single gate sensor can effectively capture the behavior of both DDs, providing detailed insights into their charging dynamics. The observed variations in the reflected signal directly correspond to changes in electron tunneling rates. Experiments reveal that at low temperatures (T ≈ 0.35 K), tunneling within DDs in the non-polarized state of a QCA cell becomes strongly correlated, leading to low-frequency (≤30 kHz) thermally driven random fluctuations in cell polarization. However, the cell remains capable of fast and robust switching when driven by an input signal. Furthermore, we provide the first direct experimental measurement of temperature effects on QCA switching. At elevated temperatures, where the Coulomb blockade is weakened, we observe degradation in the abruptness of the switching, which could lead to signal loss across a chain of cells unless appropriate clocking mechanisms are implemented.

APL Electronic DevicesVol. 1(2)
Institut polytechnique de Grenoble (FR), University of Notre Dame (US), Ikerbasque (ES), University of the Basque Country (ES), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Université Grenoble Alpes (FR)
Openalex Percentile: Top 87%
Quantum-Dot Cellular Automata
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