Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology

In this study, we perform a comprehensive optimization of key parameters influencing the performance of ACIGS (Ag-doped Cu(In,Ga)Se 2 ) solar cells, focusing on the effects of deposition environment and techniques. Parameters such as absorber thickness, dopant concentration, electron affinity, bulk defect density, and interface trap density are analyzed using advanced TCAD simulations. A calibrated device model based on experimental data accounts for all relevant material properties and defect distributions. Our findings reveal that minimizing bulk and interface defects primarily induced by deposition conditions is critical to enhancing stability and performance. Under standard test conditions (AM1.5G, 25 °C), the reference and optimized ACIGS single-junction cells achieve power conversion efficiencies (PCEs) of 23.60% and 25.80%, respectively. Furthermore, under varying temperatures (20–90 °C) and illumination intensities (10–120 mW/cm 2 ), the optimized cell demonstrates notable improvements: a 15% enhancement in power temperature coefficient and a 22% increase in voltage temperature coefficient. For tandem configurations, we pair the optimized ACIGS bottom cell featuring a double gallium grading profile with a perovskite top cell (bandgap ≈ 1.70 eV). This results in PCEs of 31.92% and 32.39% for tandem devices using ITO and band-to-band tunneling (B2BT) interconnections, respectively, under AM1.5G illumination. The results are benchmarked against recent studies, providing valuable insights into advanced strategies and the physical behavior of high-efficiency tandem perovskite/ACIGS solar cells. • Optimization of parameters affecting ACIGS solar cell performance. • Analysis of thickness, dopant concentration, and defect densities. • Use of TCAD tools for comprehensive modeling. • Improved power conversion efficiency from 23.60% to 25.80%. • Enhanced temperature coefficients under varying conditions. • Focus on defects at bulk and interface for better stability. • Design and simulation of high-efficiency tandem perovskite/ACIGS solar cells.

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Publication Details

Journal
Micro and Nanostructures
Published
2025-05-23
DOI
https://doi.org/10.1016/j.micrna.2025.208220
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73
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article

Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology

Antonio J. García‐Loureiro, Nour El I. Boukortt
1 citations
Micro and Nanostructures
Chalcogenide Semiconductor Thin Films
0.73
article

Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology

Antonio J. García‐Loureiro, Nour El I. Boukortt
article en
1 citations

Abstract

In this study, we perform a comprehensive optimization of key parameters influencing the performance of ACIGS (Ag-doped Cu(In,Ga)Se 2 ) solar cells, focusing on the effects of deposition environment and techniques. Parameters such as absorber thickness, dopant concentration, electron affinity, bulk defect density, and interface trap density are analyzed using advanced TCAD simulations. A calibrated device model based on experimental data accounts for all relevant material properties and defect distributions. Our findings reveal that minimizing bulk and interface defects primarily induced by deposition conditions is critical to enhancing stability and performance. Under standard test conditions (AM1.5G, 25 °C), the reference and optimized ACIGS single-junction cells achieve power conversion efficiencies (PCEs) of 23.60% and 25.80%, respectively. Furthermore, under varying temperatures (20–90 °C) and illumination intensities (10–120 mW/cm 2 ), the optimized cell demonstrates notable improvements: a 15% enhancement in power temperature coefficient and a 22% increase in voltage temperature coefficient. For tandem configurations, we pair the optimized ACIGS bottom cell featuring a double gallium grading profile with a perovskite top cell (bandgap ≈ 1.70 eV). This results in PCEs of 31.92% and 32.39% for tandem devices using ITO and band-to-band tunneling (B2BT) interconnections, respectively, under AM1.5G illumination. The results are benchmarked against recent studies, providing valuable insights into advanced strategies and the physical behavior of high-efficiency tandem perovskite/ACIGS solar cells. • Optimization of parameters affecting ACIGS solar cell performance. • Analysis of thickness, dopant concentration, and defect densities. • Use of TCAD tools for comprehensive modeling. • Improved power conversion efficiency from 23.60% to 25.80%. • Enhanced temperature coefficients under varying conditions. • Focus on defects at bulk and interface for better stability. • Design and simulation of high-efficiency tandem perovskite/ACIGS solar cells.

Micro and NanostructuresVol. 206
Universidade de Santiago de Compostela (ES), Ghent University (BE), Center for Research in Molecular Medicine and Chronic Diseases (ES)
Affordable and clean energy
Openalex Percentile: Top 28%
Chalcogenide Semiconductor Thin Films
0.73
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