Rheological Analysis and Numerical Modeling of Viscoelastic Buffer Receiving Layer for Micro-LED Laser Mass Transfer

This study introduces an innovative numerical model to simulate the dynamic impact of Micro-LED chips on viscoelastic buffer receiving materials during the Laser-Induced Forward Transfer (LIFT) process. We developed a novel rheological computational framework to analyze the behavior of Matrix 50–Thixotropic 07 (M50-T07) and Matrix 50–Thixotropic 13 (M50-T13) under chip impact, validated by LIFT experiments. Rheological characterization showed M50-T13's higher viscosity (3620 Pa·s) at near-zero shear rates compared to M50-T07 (126 Pa·s), with a broader linear viscoelastic range and higher yield stresses (295 Pa vs. 133 Pa). Oscillatory tests indicated M50-T13's superior damping factor, reflecting enhanced energy dissipation. Using ANSYS Fluent, the model simulated material responses, revealing M50-T13's uniform static pressure distribution (peak <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$7.96 \times 10^{4} \text{Pa}$</tex>) and controlled strain rates (peak <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.52 \times 10^{6} \mathrm{s}^{-1}$</tex>), while M50-T07 exhibited rapid deformation (strain rates up to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.92 \times 10^{6} \mathrm{s}^{-1}$</tex>). LIFT experiments confirmed simulations: M50-T13 achieved precise chip placement with deviations of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.32 \mu \mathrm{m}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.12 \mu \mathrm{m}$</tex>, whereas M50-T07 failed, showing deviations of 65.3 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \mathrm{m}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$76.1 \mu \mathrm{m}$</tex> with chip inversion. We propose a new LIFT transfer accuracy metric, actual to target landing area ratio, with M50-T13 reaching 98.49%, surpassing the industry threshold of 88.54%. This validated model optimizes receiving materials for Micro-LED assembly, highlighting viscosity and damping factor as critical to transfer success, and lays a foundation for material design in precision chip transfer applications.

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Published
2025-04-06
DOI
https://doi.org/10.1109/eurosime65125.2025.11006570
Primary Topic
Semiconductor Lasers and Optical Devices
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article
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article

Rheological Analysis and Numerical Modeling of Viscoelastic Buffer Receiving Layer for Micro-LED Laser Mass Transfer

J.P. Zhang, Liangzheng Ji, Yang Liu, Xin Wang et al.
Semiconductor Lasers and Optical Devices
article

Rheological Analysis and Numerical Modeling of Viscoelastic Buffer Receiving Layer for Micro-LED Laser Mass Transfer

J.P. Zhang, Liangzheng Ji, Yang Liu, Xin Wang, Jun Wang, Fenglian Sun, Zehou Li
article en

Abstract

This study introduces an innovative numerical model to simulate the dynamic impact of Micro-LED chips on viscoelastic buffer receiving materials during the Laser-Induced Forward Transfer (LIFT) process. We developed a novel rheological computational framework to analyze the behavior of Matrix 50–Thixotropic 07 (M50-T07) and Matrix 50–Thixotropic 13 (M50-T13) under chip impact, validated by LIFT experiments. Rheological characterization showed M50-T13's higher viscosity (3620 Pa·s) at near-zero shear rates compared to M50-T07 (126 Pa·s), with a broader linear viscoelastic range and higher yield stresses (295 Pa vs. 133 Pa). Oscillatory tests indicated M50-T13's superior damping factor, reflecting enhanced energy dissipation. Using ANSYS Fluent, the model simulated material responses, revealing M50-T13's uniform static pressure distribution (peak <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$7.96 \times 10^{4} \text{Pa}$</tex>) and controlled strain rates (peak <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$6.52 \times 10^{6} \mathrm{s}^{-1}$</tex>), while M50-T07 exhibited rapid deformation (strain rates up to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.92 \times 10^{6} \mathrm{s}^{-1}$</tex>). LIFT experiments confirmed simulations: M50-T13 achieved precise chip placement with deviations of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.32 \mu \mathrm{m}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.12 \mu \mathrm{m}$</tex>, whereas M50-T07 failed, showing deviations of 65.3 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mu \mathrm{m}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$76.1 \mu \mathrm{m}$</tex> with chip inversion. We propose a new LIFT transfer accuracy metric, actual to target landing area ratio, with M50-T13 reaching 98.49%, surpassing the industry threshold of 88.54%. This validated model optimizes receiving materials for Micro-LED assembly, highlighting viscosity and damping factor as critical to transfer success, and lays a foundation for material design in precision chip transfer applications.

Harbin University of Science and Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 91%
Semiconductor Lasers and Optical Devices
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