Simulation Informed Method to Compare Experimental and Numerical Results in Plastic Packages

This paper describes the first steps in the realization of a quantitative plastic package numerical model to evaluate circuit performance changes due to stress in silicon. Leveraging the piezoresistive effect and simple resistors electrical measurements, combined with some considerations spawned by symmetry and simulation output, we can compare directly the measured (function of the electrical output) and the computed stress field. Warpage is also considered to correlate the numerical model and the experiments. It will be shown that a simple linear elastic model is unable to predict the stress field and the warpage with enough accuracy and there is a need to develop a more predictive simulation model.