Simulation-Driven Insights Into Nanoindentationbased Adhesion Strength Measurement of Wafer-to-Wafer Bonds
This study investigates the adhesion strength of wafer-to-wafer (W2W) bonds using nanoindentation (NI) and finite-element simulations. Nanoindentation offers a novel, nondestructive method to assess adhesion strength. Finite-element analysis is used to simulate the nanoindentation process, aiding in the investigation of critical factors such as Young's modulus, yield stress, bonding layer thickness, and indenter geometry. Simulation results and regression analysis reveal a strong correlation between the bond strength and the nanoindentationbased energy measurement. By analyzing force-displacement curves and the delaminated area, this approach provides valuable insights into the bond strength of the wafers, improving the understanding of nanoindentation-based adhesion strength measurements which is essential for the reliability of W2W bonds.
Authors
- Oguzhan Orkut Okudur (ORCID: https://orcid.org/0000-0002-4790-7772)
- Clément Merckling (ORCID: https://orcid.org/0000-0003-3084-2543)
- Yusuf Burak Ozdemir (ORCID: https://orcid.org/0000-0001-8109-320X)
- Kris Vanstreels (ORCID: https://orcid.org/0000-0002-4420-0966)
- Mario González (ORCID: https://orcid.org/0000-0003-4374-4854)
Institutions
- IMEC (BE)
- KU Leuven (BE)
Publication Details
- Published
- 2025-04-06
- DOI
- https://doi.org/10.1109/eurosime65125.2025.11006560
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.73