Maximizing Interconnect Bandwidth and Efficiency in Nonvolatile Memory, Express-Based Key-Value Solid-State Devices With Fine-Grained Value Transfer

The Key-Value SSD (KV-SSD) redefines storage interfaces by integrating a key-value store directly within the device, offering native support for non-page-aligned key-value pairs. This architectural innovation enables KV-SSDs to offload storage management from the host system, positioning them as ideal candidates for resource disaggregation. However, KV-SSDs face significant challenges, notably I/O amplification caused by conflicts with traditional storage protocols like NVMe, which are designed around memory page units. Specifically, this results in a substantial increase in data traffic over interconnect between the host and SSD. This paper introduces BandSlim, a novel solution addressing these challenges in data transfer by leveraging (i) NVMe command piggybacking for universally compatible, fine-grained transfers without requiring interconnect-level support and (ii) the remote memory access capabilities of emerging Compute eXpress Link (CXL) interconnects for higher-performance fine-grained transfers. Through extensive evaluations, BandSlim achieves up to a 97.9% reduction in PCIe traffic compared to conventional NVMe KV-SSDs.

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Publication Details

Journal
IEEE Micro
Published
2025-05-23
DOI
https://doi.org/10.1109/mm.2025.3572475
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73
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article

Maximizing Interconnect Bandwidth and Efficiency in Nonvolatile Memory, Express-Based Key-Value Solid-State Devices With Fine-Grained Value Transfer

Seung-Jun Cha, Chang-Gyu Lee, Soon Hwang, Junhyeok Park et al.
1 citations
IEEE Micro
Semiconductor materials and devices
0.73
article

Maximizing Interconnect Bandwidth and Efficiency in Nonvolatile Memory, Express-Based Key-Value Solid-State Devices With Fine-Grained Value Transfer

Seung-Jun Cha, Chang-Gyu Lee, Soon Hwang, Junhyeok Park, Woosuk Chung, Youngjae Kim
article en
1 citations

Abstract

The Key-Value SSD (KV-SSD) redefines storage interfaces by integrating a key-value store directly within the device, offering native support for non-page-aligned key-value pairs. This architectural innovation enables KV-SSDs to offload storage management from the host system, positioning them as ideal candidates for resource disaggregation. However, KV-SSDs face significant challenges, notably I/O amplification caused by conflicts with traditional storage protocols like NVMe, which are designed around memory page units. Specifically, this results in a substantial increase in data traffic over interconnect between the host and SSD. This paper introduces BandSlim, a novel solution addressing these challenges in data transfer by leveraging (i) NVMe command piggybacking for universally compatible, fine-grained transfers without requiring interconnect-level support and (ii) the remote memory access capabilities of emerging Compute eXpress Link (CXL) interconnects for higher-performance fine-grained transfers. Through extensive evaluations, BandSlim achieves up to a 97.9% reduction in PCIe traffic compared to conventional NVMe KV-SSDs.

IEEE MicroVol. 45(6)
SK Group (South Korea) (KR), Electronics and Telecommunications Research Institute (KR), Sogang University (KR)
Affordable and clean energy
Openalex Percentile: Top 28%
Semiconductor materials and devices
0.73
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Maximizing Interconnect Bandwidth and Efficiency in Nonvolatile Memory, Express-Based Key-Value Solid-State Devices With Fine-Grained Value Transfer — Seung-Jun Cha, Chang-Gyu Lee, et al. · IEEE Micro (2025) | TGRS Research Map | TGRS