Towards Health Monitoring of SiC MOSFETs by Precise Junction Temperature Profiling

Silicon-Carbide (SiC) MOSFETs are widely used in high-power and high-efficiency applications such as electric vehicles and power supplies. However, long-term reliability remains a critical concern, particularly under extreme operating conditions. This work aims to explain the health monitoring of SiC metal oxide-semiconductor field effect transistors (MOSFETs) through precise junction temperature <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(T_{\mathrm{j}})$</tex> profiling based on performed measurements. The study focuses on the temperature-dependent behavior of the on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(R_{\text{DS}(\text{on})})$</tex>, a key parameter that varies with the aging, degradation, and temperature of the device. By systematically measuring <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{DS}(\text{on})}$</tex> at different temperatures and at various stages of the operating life of the device, we can establish a predictive model to assess the health of SiC MOSFETs. The importance of pulse duration of the drain current is stressed to avoid the self-heating effect with some device physics insights. The proposed methodology enables better understanding of the SiC MOSFET performance for future real-time condition monitoring, facilitating early failure detection and lifetime estimation. This approach provides valuable information for improving reliability and optimizing maintenance strategies in power electronics systems. Experimental results validate the effectiveness of the proposed method and give direction for future research opportunities.