Two-dimensional to bulk crossover of the WSe<sub>2</sub> electronic band structure

Abstract Transition metal dichalcogenides (TMDs) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane ( z -direction) due to the hybridization of out-of-plane orbitals but no k z -dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of large area epitaxial WSe 2 thin films. Increasing number of discrete electronic states appears in given k z -ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green’s function calculation.

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Publication Details

Journal
Electronic Structure
Published
2025-05-23
DOI
https://doi.org/10.1088/2516-1075/addca9
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.07

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article

Two-dimensional to bulk crossover of the WSe2 electronic band structure

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Electronic Structure
2D Materials and Applications
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article

Two-dimensional to bulk crossover of the WSe2 electronic band structure

Abdelkarim Ouerghi, Matthieu Jamet, Aki Pulkkinen, Céline Vergnaud, Chiara Bigi, T. Jaouen, F. Bertran, J. Minář, Raphaël Salazar, Julien Rault, Patrick Le Fèvre
article en
4 citations

Abstract

Abstract Transition metal dichalcogenides (TMDs) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane ( z -direction) due to the hybridization of out-of-plane orbitals but no k z -dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of large area epitaxial WSe 2 thin films. Increasing number of discrete electronic states appears in given k z -ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green’s function calculation.

Electronic StructureVol. 7(2)
Institut polytechnique de Grenoble (FR), Centre National de la Recherche Scientifique (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Université Paris-Saclay (FR), Synchrotron soleil (FR), CEA Grenoble (FR), Centre de Nanosciences et de Nanotechnologies (FR), Institut de Physique de Rennes (FR), Spintronique et Technologie des Composants (FR), Université de Rennes (FR), ABB (Switzerland) (CH), Université Grenoble Alpes (FR), University of West Bohemia in Pilsen (CZ)
Agence Nationale de la Recherche
Openalex Percentile: Top 13%
2D Materials and Applications
2.07
DOIOpen Access PDFOpenAlex
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