X-Band GaN Front-End MMIC for Radar Applications

In this study, we designed and manufactured an X-band front-end MMIC with a power amplifier, low-noise amplifier, and switch integrated into one chip using a 0.15 μm GaN HEMT process. The front-end MMIC (chip size: 4.5×2 mm2) showed receiver characteristics with a gain of 21 dB and a noise figure of 2.1~2.4 dB noise figure, along with transmitter characteristics a gain of 26 dB, an output power of 41 dBm, and a power added efficiency (PAE) of 42 % in the frequency range of 8.5~10.5 GHz. This front-end MMIC can be applied to AESA radars or ultra-small SAR satellites.